Bourns, Insulated Gate Bipolar Transistor (IGBT)

Model BID Series Insulated Gate Bipolar Transistor (IGBT) Discrete Solution. By combining technology from a MOSFET gate and a bipolar transistor, the Bourns® IGBT Discrete BID Series creates a component designed for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, which, in turn, results in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.In addition, due to the thermally efficient TO-252, TO-247 and TO-247N packages, the devices can provide alower thermal resistance Rth(j-c), making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS),Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.


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